Aluminum nitride nanotubes

作者：Noei Maziar; Soleymanabadi Hamed; Peyghan Ali Ahmadi

来源：CHEMICAL PAPERS, 2017, 71(5): 881-893.

DOI：10.1007/s11696-016-0015-5

• Nanostructures based on AlN
• Aluminum nitride nanotube
• Computational study
• Wide-band-gap systems
• Sensor

An AlN nanotube (AlNNT) was theoretically predicted in 2003. In comparison with the carbon nanotubes, the AlNNTs are wide-band-gap nanostructures with high reactivity, high thermal stability and sharp electronic sensitivity toward some chemicals. The B3LYP predicts an HOMO-LUMO gap of 3.74-4.27 eV for zigzag AlNNTs, while the experimental bad gap of bulk AlN is about 6.28 eV. The lowest strain energy of AlNNTs relative to its AlN nanosheet compared to the nanosheets of carbon and BN nanotubes with an equivalent diameter suggests the feasibility of AlNNT synthesis from its nanosheet. Theoretical methods predict a Young's Modulus of about 453 GPa for AlNNTs that is smaller than that of carbon (1 TPa), BN (870 GPa) and GaN (796 GPa) nanotubes. In 2003, the faceted single-crystalline hexagonal AlNNTs were synthesized and extensively explored by means of density functional theory calculations. Several works have suggested different potential applications for AlNNTs including chemical sensors, hydrogen storage, gas adsorbent, and electron field emitter. This review is a comprehensive study on the latest achievements in the structural analyses, synthesis, and property evaluations based on the computational methods on the AlNNTs in the light of the development of nanotubes.

• 出版日期2017-5