Packaging Technologies and Luminescence Properties of Ce:YAG Single Crystal for White Light-emitting Diode

作者:Xiang Wei Dong*; Zhao Bin Yu; Liang Xiao Juan; Chen Zhao Ping; Xie Cui Ping; Luo Le; Zhang Zhi Min; Zhang Jing Feng; Zhong Jia Song
来源:Journal of Inorganic Materials, 2014, 29(6): 614-620.
DOI:10.3724/SP.J.1077.2014.13481

摘要

The Ce:YAG single crystal for white light-emitting diode (WLED) application was grown by the Czochralski method. The thermal stability and optical properties of samples were characterized by absorption spectrum, photoluminescence spectra and temperature-dependent PL spectra. The photoelectric performance of WLEDs fabricated by the Ce:YAG single crystal were also measured. It is found that the Ce:YAG single crystal shows a broad emission band from 500 nm to 700 nm under blue light (wave length 466 nm). Absorption peaks, located at 202, 219, 247.3, 347.4 and 455.5 nm, are due to 4f -> 5d transition, and the energy of 5d orbits is divided into 21954, 29154, 40437, 45662 and 49505 cm(-1). As the temperature increases, the PL intensity is reduced because of a higher energy of the F-2(7/2), and the damping upon PL intensity by the Ce:YAG single crystal (13.28%) are much lower than that by commercially available phosphors (30%). When the current is at a standard state and the luminous flux of emission blue light is around 3.7 lm, the most suitable thickness for the Ce:YAG single crystal is 0.5 mm Since the WLED fabricated by the Ce:YAG single crystal prepared in present work meets all requirements in related GB codes, and its performance is better in comparison with that of the commercially available one, the Ce:YAG single crystal will possibly be used to fabricate new-type WLED devices.