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摘要
Surface photonic crystal (PC) structure can improve the external quantum efficiency of light-emitting diode (LED). However, it is very difficult to fabricate large area and uniform nanometer photonic crystal structure in this field. In this paper, two-dimensional PC with hole-like structure is successfully transferred to the surface of gallium nitride LED (GaN-LED) by the mental-polymer double-layer mask dry etching technology combined with the nanoimprint lithography. The large area nanometer PC patterns with pore diameter of 240 nm and period of 450 nm are obtained. The results show that the photoluminescence peak intensity of LED with the PC structure is 7.2 times higher than that of the conventional LED.
