Non-destructive detection of killer defects of diamond Schottky barrier diodes

作者:Ohmagari Shinya*; Teraji Tokuyuki; Koide Yasuo
来源:Journal of Applied Physics, 2011, 110(5): 056105.
DOI:10.1063/1.3626791

摘要

Reverse characteristics of vertical-type Au/p-diamond (100) Schottky barrier diodes were investigated and characterized with cathodoluminescence, which showed a correlation with crystalline defects. Electrical measurements revealed that most diodes had low reverse current below 0.1 pA in the bias voltage range up to 50 V, although reverse current increases rapidly in some diodes and reaches 0.1 mA at 10 V. A four-fold symmetrical luminescence pattern that aligned crystallographically to the substrate was observed from the Schottky diodes, showing large reverse current. Removal of these defects is a key issue to increase the diode area of diamond-based rectifiers.

  • 出版日期2011-9-1