Ultra low voltage, ultra low power low noise amplifier for 2 GHz applications

作者：Karimi Gh R^*; Sedaghat S Babaei

来源：AEU-International Journal of Electronics and Communications, 2012, 66(1): 18-22.

DOI：10.1016/j.aeue.2011.04.008

• Cascode topology
• Forward body bias
• Low voltage
• RF

In this paper, a 0.29 V, 2 GHz CMOS low noise amplifier (LNA) intended for ultra low voltage and ultra low power applications is developed. The circuit is simulated in standard 0.18 mu m CMOS MOSIS. A two-stage architecture is then used to simultaneously optimize the gain and noise performance. Using forward-body-biased, the proposed LNA can operate at 0.29 V supply voltage, successfully demonstrating the application potential of dynamic threshold voltage technology in the radio frequency region. The LNA provides a good gain of 26.25 dB, a noise figure of 2.202 dB, reverse isolation (S(12)) of -59.04 dB, input return loss (S(11)) of -122.66 dB and output return loss (S(22)) of -11.61 dB, while consuming only 0.96mW dc power with an ultra low supply voltage of 0.29 V. To the best of authors' knowledge this is the lowest voltage supply and the lowest power consumption CMOS LNA design reported for 2 GHz to date.

• 出版日期2012