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摘要
In this paper, we propose a simple analytical high frequency noise model for AlGaN/GaN HEMT including the effect of gate leakage current. Based on the DC and CV model proposed by our group recently, the expression for drain thermal noise current is derived using the impedance field method (IFM). Using the steady-state Nyquist theorem for multiterminal devices [1], the induced-gate noise is also calculated simply and explicitly. Also, from the comparison between various measured noise results and our simulation results, the validity of our model is clearly verified.
- 出版日期2010-11
- 单位清华大学
