科研之友
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摘要
An Al thin film deposited on a Si(111) substrate in an ultrahigh vacuum (UHV) chamber was oxidized by oxygen exposure of 4 and 100 L at room temperature. Then, X-ray photoelectron spectroscopy (XPS) using X-rays with various excitation energies using synchrotron radiation (SR) was carried out to evaluate the thickness of the very thin oxide. The obtained spectra showed Al 2p peaks assigned to the metal and the oxide. From their peak ratios obtained by the curve fitting of the spectra, the depth profile of oxygen composition was derived by considering the analysis depth of XPS on the basis of the effective attenuation length (EAL) of photoelectrons. By simulation using a single-layer model, the thicknesses of the oxide generated by oxygen exposure of 4 and 100 L were determined. The results suggest that the oxide layer generated by only a few langumuir of oxygen in the initial stage suppresses the diffusion of oxygen to the interface of the oxide and the metal.
- 出版日期2015-5
