Natural quantum dots in the InAs/GaAs wetting layer

作者：Babinski A^*; Borysiuk J; Kret S; Czyz M; Golnik A; Raymond S; Wasilewski Z R

来源：Applied Physics Letters, 2008, 92(17): 171104.

DOI：10.1063/1.2918836

We report on microphotoluminescence study of excitons localized by potential fluctuations in a wetting layer (WL), which accompanies InAs/GaAs quantum dots (QDs). Linear polarization of spectral lines due to localized excitons enable us to identify a neutral excitonic and biexcitonic emission. A charged exciton has also been identified. High resolution transmission electron microscopy measurements of the investigated structure reveal lateral fluctuations of In content in the WL, as well as its broadening. Both effects give rise to potential fluctuations, which can confine excitons observed in our measurements. The potential fluctuations can be regarded as "natural" QDs in the WL.

• 出版日期2008-4-28