Design and implementation of all MOS micro-power voltage reference circuit

作者：Chouhan Shailesh Singh^*; Halonen Kari

来源：Analog Integrated Circuits and Signal Processing, 2014, 80(3): 399-406.

DOI：10.1007/s10470-014-0361-6

• All-MOS implementation
• Energy harvesting
• Voltage reference
• Temperature coefficient
• Low power

In this work we are proposing the all MOST based reference voltage generating circuit, which utilizes the classical principle of addition of two voltages with opposite temperature coefficients. The targeted application of the proposed circuit is a low-dropout regulator which is used in a RF energy harvesting system. The proposed voltage reference circuit is implemented using a standard 0.18 mu m CMOS technology. It generates the average reference voltage of 543.658 mV with an average temperature coefficient of 17.43 ppm/A degrees C in the temperature range of -40 to +85 A degrees C, for the operating supply voltage ranging from 1.25 to 2 V. The maximum power consumption of the proposed architecture is a parts per thousand 1.5 mu W, including power dissipation in bias circuitry and the reference voltage generating core at 2 V supply voltage. The averaged measured line regulation is 1.642 mV/V. The measured power-supply rejection ratio without any filtering capacitor at 100 Hz and 1 MHz are -62.24 and -18.94 dB, respectively. Additionally, the measured noise density without any filtering capacitor at 10 Hz and 100 KHz is 20.54 and , respectively. The proposed circuit has silicon area of approximate to 0.007 mm(2).

• 出版日期2014-9