An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications

作者：Wu Yun Chi^*; Lin Yueh Chin; Chang Edward Yi; Lee C T; Kei Chi Chung; Chang Chia Ta; Hsu H T

来源：Electrochemical and Solid-State Letters, 2010, 13(6): II219-II221.

DOI：10.1149/1.3380967

An AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) single- pole-double-throw (SPDT) switch using Al2O3 high-k gate dielectric by atomic layer deposition is fabricated. The MOS-PHEMT exhibited a comparable dc performance and a much lower gate current compared to PHEMT. Radio-frequency (rf) test shows that the MOS-PHEMT switch has an insertion loss of less than 0.5 dB, an isolation larger than 30 dB, a return loss larger than 15 dB, and an input power for 1 dB compression of 31.4 dBm at 2.5 GHz. Overall, MOS-PHEMT monolithic microwave integrated circuits switches have comparable rf performance to PHEMT switches but with much lower dc power consumption.

• 出版日期2010
• 单位清华大学