High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates

作者：Zhuang Chongyuan^*; Wang Lei; Dai Zhun; Yang Deren

来源：ECS Solid State Letters, 2015, 4(5): P39-P42.

DOI：10.1149/2.0021505ss

The Ni-NiO-Ag Metal-Insulator-Metal (MIM) diodes were fabricated via electrochemical deposition, whose contact area was restricted to be 3.1 x 10(-4) mu m(2) by the nanochannels of anodic aluminum oxide templates. The NiO insulating layer featuring an average thickness of 6 nm was grown by thermal oxidation, as revealed by transmission electron microscopy (TEM). The MIM diodes show a highly asymmetric and nonlinear I-V characteristic, with a maximum responsivity of 8.5 V-1 and a zero-bias responsivity of 5.8 V-1, suggesting its great potential for high frequency application.

• 出版日期2015
• 单位浙江大学