Development of FET-Type Reference Electrodes for pH-ISFET Applications

作者：Chang Kow Ming^*; Chang Chih Tien; Chao Kuo Yi; Chen Jin Li

来源：Journal of the Electrochemical Society, 2010, 157(5): J143-J148.

DOI：10.1149/1.3355904

• composite materials
• electrochemical electrodes
• ion exchange
• ion sensitive field effect transistors
• photoresists
• polymer films

A reference field effect transistor (FET) fabrication method by using a perfluorosulfonated proton exchange membrane associated with ion-insensitive polymers is proposed. The single-layer film of the perfluorosulfonated polymer/photoresist composite among the eight films tested demonstrated the best performance of 5.8 mV/pH and 11.27 mV/pNa sensitivities. Meanwhile, the drift performances were 3.5 mV/h and less than 1 mV/h for the first and second 4 h tests. A high sensitivity of 52.1 mV/pH and a low interference of 4.61 mV/pNa were obtained in the range of pH 1-13 through the differential arrangement with ZrO(2) gate ion-sensitive field-effect transistors (ISFETs). Meanwhile, the transconductance match of the proposed reference FET/ISFET pair would simplify the differential readout circuits.

• 出版日期2010