AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

作者：Neel D^*; Sergent S; Mexis M; Sam Giao D; Guillet T; Brimont C; Bretagnon T; Semond F; Gayral B; David S; Checoury X; Boucaud P

来源：Applied Physics Letters, 2011, 98(26): 261106.

DOI：10.1063/1.3605592

An original method to fabricate III-nitride photonic crystal membranes without etching of III-N materials is reported. A photonic crystal pattern is first realized in a silicon substrate. GaN quantum dots embedded in a thin AlN layer are then grown by conformal epitaxy using ammonia-based molecular beam epitaxy on the top of the patterned silicon substrate and a free-standing membrane is achieved by selective etching of the silicon substrate through the holes of the photonic crystal. Room temperature microphotoluminescence measurements show a quality factor as high as 1800 at 425 nm on a modified L3 cavity. Possibility to achieve lasing with this system is discussed.

• 出版日期2011-6-27
• 单位中国地震局