Preface to Special Issue on Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices(Ⅰ)

作者：Genquan Han^*; Shibing Long^*; Yuhao Zhang^*; Yibo Wang^*; Zhongming Wei^*

来源：Chinese Journal of Semiconductors, 2023, 44(06): 8-10.

<正>There is currently great optimism within the electronics community that gallium oxide(Ga2O3) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga2O3 technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications.

• 单位
  test; 西安电子科技大学; 中国科学技术大学