Anisotropic strain relaxation and abnormal zigzag shape planar defects in nonpolar a-GaN grown by metalorganic chemical vapor deposition

作者：Kong Bo Hyun; Cho Hyung Koun^*; Song Keun Man; Yoon Dea Ho

来源：Journal of Crystal Growth, 2010, 313(1): 8-11.

DOI：10.1016/j.jcrysgro.2010.09.084

• Crystal structure
• Planar defects
• Metalorganic chemical vapor deposition
• Nitrides
• Semiconducting III-V materials

The correlation between bi-axial In-plane stress relaxation and formation mechanism of the abnormal zigzag shape prismatic stacking faults (PSFs) observed in a-GaN epilayers grown by metalorganic chemical vapor deposition was investigated using transmission electron microscopy In a-GaN epilayers on r-plane sapphire substrates showing an anisotropic lattice mismatch the misfit strain along the [0 0 0 1](GaN) direction was mostly relaxed by the formation of basal stacking faults On the other hand the [(1) over bar1 0 0](GaN) direction with a larger misfit had an in-plane residual stress of similar to 3% after the formation of the zigzag shaped PSFs and misfit dislocations The resultant higher res

• 出版日期2010-12-15