Monitoring Stress-Induced Defects in HK/MG FinFETs Using Random Telegraph Noise

作者：Puglisi Francesco Maria^*; Costantini Felipe; Kaczer Ben; Larcher Luca; Pavan Paolo

来源：IEEE Electron Device Letters, 2016, 37(9): 1211-1214.

DOI：10.1109/LED.2016.2590883

• FinFET
• random telegraph noise
• stress-induced leakage current
• defects
• stress
• degradation

In this letter, we report on nFinFETs degradation during stress exploiting I-D and I-G noise analysis. We employed a stress/measure approach to monitor device characteristics at different levels of cumulative stress. I-G-VG and I-D-VG indicators suggest defects generation to occur away from the channel. This is confirmed by the quantitative analysis of I-D and I-G stationary RTN signals at operating conditions, which show no correlation as opposite to what reported for planar FETs. Moreover, we analyze for the first time the I-D-t and I-G-t non-stationary instabilities during stress. The results confirm that the generation of defects responsible for SILC occurs away from the channel. Only in highly stressed devices, I-D-t and I-G-t curves observed during stress exhibit anti-correlation, due to comparable values of the gate and drain current levels originated by the high defect density. Hence, in nFinFETs, I-D and I-G RTN/instabilities might originate from mechanisms involving different entities.

• 出版日期2016-9