A comprehensive model of frequency dispersion in 4H-SiC MESFET

作者：Lu Hongliang^*; Zhang Yimen; Zhang Yuming; Zhang Tao

来源：Solid-State Electronics, 2009, 53(3): 285-291.

DOI：10.1016/j.sse.2008.12.004

• 4H-SiC
• Metal semiconductor field effect transistor (MESFET)
• Trap effect
• Frequency dispersion

A comprehensive model to accurately and simply describe the trapping property and its influence on device frequency characteristics is proposed for SiC MESFET. DC performance is simulated and trap parameters are extracted. Both positive and negative frequency dispersions of transconductance are simulated and analyzed with deep level traps and self-heating effects. Good agreements with reported results are obtained.

• 出版日期2009-3
• 单位西安电子科技大学