Double oxide deposition and etching nanolithography for wafer-scale nanopatterning with high-aspect-ratio using photolithography

作者：Seo Jungho^*; Cho Hanchul; Lee Ju kyung; Lee Jinyoung; Busnaina Ahmed; Lee HeaYeon

来源：Applied Physics Letters, 2013, 103(3): 033105.

DOI：10.1063/1.4813738

We report a nanolithography technique for the high aspect-ratio nanostructure manufacturing using DODE (double oxide deposition and etching) process. Conventional microfabrication processes are integrated to manufacture nanostructure arrays with sub-100 nm of linewidth. This lithography method is developed to overcome resolution limits of photolithography. High aspect-ratio nanostructures with sub-100 nm of lindewidth were fabricated on wafer-scale substrate without nanolithography techniques. The DODE lithography process presented enabled to pave a way to overcome limitations of nanolithography processes and allowed to manufacture large-scale nanostructures using photolithography and thin film deposition and dry etching processes.

• 出版日期2013-7-15
• 单位东北大学