Compact 2D threshold voltage modeling and performance analysis of ternary metal alloy work-function-engineered double-gate MOSFET

作者：Saha Priyanka; Sarkhel Saheli; Sarkar Subir Kumar

来源：Journal of Computational Electronics, 2017, 16(3): 648-657.

DOI：10.1007/s10825-017-1015-6

• Double gate MOSFET
• Work function engineering
• Ternary metal alloy gate
• Short-channel effect (SCE)
• Threshold voltage roll-off (TVRO)
• Drain-induced barrier lowering (DIBL)

The present work aims to ameliorate the recently popular innovative gate engineering concept of continuously varying the mole fraction in a binary metal alloy gate electrode along the horizontal direction and realize a ternary metal alloy gate electrode. Based on this, a new ternarymetal alloy (TMA) double-gate MOSFET has been proposed and a detailed two-dimensional analytical modeling has been presented to make an overall performance comparison of this proposed TMA double-gate MOSFET with that of its binary metal alloy gate counterpart in terms of surface potential, electric field, threshold voltage roll-off, drain-induced barrier lowering and current in order to establish the superiority of a ternary metal alloy gate electrode over its binary metal alloy equivalent. Analytical results have been compared with SILVACO ATLAS device simulator results to validate our present model.

• 出版日期2017-9