An Expandable ZnS-SiO2 Liner Stressor for N-Channel FinFETs

作者：Ding Yinjie^*; Zhou Qian; Liu Bin; Gyanathan Ashvini; Yeo Yee Chia

来源：IEEE Transactions on Electron Devices, 2014, 61(6): 1963-1971.

DOI：10.1109/TED.2014.2317717

• Expansion
• liner stressor
• multigate FET
• n-channel FinFET (N-FinFET)
• strain
• ZnS-SiO2

We report the demonstration of a novel ZnS-SiO2 liner stressor to enhance drive current in Si n-channel FinFETs (N-FinFETs). ZnS-SiO2 expands during thermal anneal due to an increase in crystallite size. A ZnS-SiO2 liner stressor wrapping around an N-FinFET can be expanded and made to exert high tensile stress in the N-FinFET channel for drive current enhancement. Saturation drain current enhancement of similar to 26% and linear drain current enhancement of similar to 48% were observed for FinFETs with ZnS-SiO2 liner stressor compared with control FinFETs without ZnS-SiO2, with no compromise on short-channel effects. The drain current enhancement increases with decreasing gate length. This technology was realized in FinFETs with silicon-carbon source/drain stressors and Al-incorporated NiSi contacts. ZnS-SiO2 liner stressor could be a strain engineering option for N-FinFETs at sub-20-nm technology nodes.

• 出版日期2014-6