A Novel p-n-Diode Structure of SONOS-Type TFT NVM With Embedded Silicon Nanocrystals

作者：Chiang Tsung Yu^*; Ma William Cheng Yu; Wu Yi Hong; Wang Kuan Ti; Chao Tien Sheng

来源：IEEE Electron Device Letters, 2010, 31(11): 1239-1241.

DOI：10.1109/LED.2010.2064153

• Band-to-band tunneling (BTBT)
• nonvolatile memory (NVM)
• p-n diode (PND)
• silicon nanocrystal (Si-NC)
• thin-film transistor (TFT)

In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10(-7) A by the band-to-band tunneling current. A much larger memory window (> 12 V) and good data retention time (> 10(8) s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.

• 出版日期2010-11