科研之友
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摘要
We have developed and successfully used a new method for structuring semiconductor surfaces that is based on the phenomenon of cavitation excited by focused ultrasound in a liquid medium. In this work, the cavitation impact of ultrasound at a frequency of 1 MHz and a power density of 15 W/cm(2) on the surface of single-crystalline (001) GaAs in liquid nitrogen led to the formation of a submicron-sized relief of rippled and concentric structures with a height of up to 300 nm. Data of Raman spectroscopy and energy-dispersive X-ray spectroscopy showed the formation of GaAs1 - x N (x) surface compound with a nitrogen content of 5-7%.
- 出版日期2015-2
