All-organic vertical transistor in an analogous n-semiconductor/metal/p-semiconductor trilayer structure

作者：Tavares Ana C B; Serbena Jose P M; Huemmelgen Ivo A; Meruvia Michelle S^*

来源：Organic Electronics, 2014, 15(3): 738-742.

DOI：10.1016/j.orgel.2014.01.004

• Organic transistor
• Vertical architecture transistor
• Poly(bithiophene)

We report on the development and characterization of an all-organic vertical transistor, consisting of a p-type conjugated polymer, poly(bithiophene), as collector material, a poly(ethylene dioxythiophene)/poly(styrene sulfonate) layer as base material and a n-type molecule layer, Alq(3), as emitter material. The transistor is operated under direct bias in the common-emitter mode, being its operation based upon charge recombination of the injected majority carriers at the emitter-base interface. Experimental results have yielded current amplification factors up to 7. We also demonstrate that tunneling controls the transport characteristics of the device.

• 出版日期2014-3