Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

作者：Zhang Zhan-Gang; Liu Jie^*; Hou Ming-Dong; Sun You-Mei; Su Hong; Duan Jing-Lai; Mo Dan; Yao Hui-Jun; Luo Jie; Gu Song; Geng Chao; Xi Kai

来源：Chinese Physics B, 2013, 22(8): 086102.

DOI：10.1088/1674-1056/22/8/086102

• single event effects
• effective LET method
• multiple-bit upset
• upset cross section

Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of similar to 41 MeV/(mg/cm(2)), which can be partially explained by the fact that the MBU rate for tilted ions of 30 degrees is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of similar to 9.5 MeV/(mg/cm(2)), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.

• 出版日期2013-8
• 单位中国科学院近代物理研究所; 中国科学院大学