Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-k Dielectrics

作者：Nepal Neeraj^*; Garces Nelson Y; Meyer David J; Hite Jennifer K; Mastro Michael A; Eddy Charles R Jr

来源：Applied Physics Express, 2011, 4(5): 055802.

DOI：10.1143/APEX.4.055802

We report the effects of GaN surface pretreatments on the material and electrical properties of Al(2)O(3) dielectric deposited by atomic layer deposition (ALD). A layer of Al(2)O(3) was deposited at different temperatures on metal organic chemical vapor deposition grown n-GaN that was treated with either H(2)O(2):H(2)SO(4) (1 : 5, piranha), HCl:H(2)O (1 : 1, HCl), or HF:H(2)O (1 : 1, HF) prior to Al(2)O(3) deposition. The Al(2)O(3) layers on piranha-and HF-treated GaN were observed to be uniformly smooth. The piranha pretreatment resulted in the lowest hysteresis. Pretreatment of the GaN surface with piranha removes carbon and hydroxylates the surface, resulting in better quality ALD Al(2)O(3).

• 出版日期2011-5