An Investigation of High-Temperature (to 300 degrees C) Safe-Operating-Area in a High-Voltage Complementary SiGe on SOI Technology

作者：Omprakash Anup P^*; Dao Ha; Raghunathan Uppili S; Ying Hanbin; Chakraborty Partha S; Babcock Jeffrey A; Mukhopadhyay Rajarshi; Cressler John D

来源：IEEE Transactions on Electron Devices, 2017, 64(9): 3748-3755.

DOI：10.1109/TED.2017.2730852

• Auger recombination
• complementary silicon-germanium (C-SiGe)
• electrothermal boundary
• high temperature
• high voltage
• high-current stress
• mixed-mode stress
• reliability
• silicon-on-insulator (SOI)

Safe-operating-area (SOA) in a high-voltage complementary silicon-germanium (SiGe) (= n-p-n + p-np) on silicon-on-insulator (SOI) technology is investigated from 24 degrees C to 300 degrees C. Three key reliability degradation regions are identified, including: 1) high-current; 2) mixed-mode; and 3) high-power. The degradation mechanisms, which are operative, including Auger damage, mixed-mode damage, and electrothermal runaway as well as their temperature dependences are identified. Mixed-mode damage exhibits a strong negative temperature coefficient for both n-p-n and p-n-p SiGe heterojunction bipolar transistors (HBTs) up to 300 degrees C, which leads to an increase in the SOA from a high-voltage perspective. Electrothermal boundaries are also explored by finding J(C,crit) and V-CB,(crit) across the J(C)-V-CB plane up to 300 degrees C. Both n-p-n and p-n-p SiGe HBTs show an increase in the SOA for the electrothermal boundary as temperature increases. High-current-induced damage, on the other hand, exhibits a positive temperature coefficient, which implies that high current drive should carefully be considered when using SiGe HBT circuits operated in a high-temperature environment. However, at very high temperatures (> 200 degrees C), the high current damage processes show annealing properties, which implies that at sufficiently high temperatures, annealing can dominate over Auger damage and potentially extend the SOA of the technology.

• 出版日期2017-9