Flexible Complementary Oxide-Semiconductor-Based Circuits Employing n-Channel ZnO and p-Channel SnO Thin-Film Transistors

作者：Li Yun Shiuan; He Jyun Ci; Hsu Shu Ming; Lee Cheng Che; Su Dung Yue; Tsai Feng Yu; Cheng I Chun^*

来源：IEEE Electron Device Letters, 2016, 37(1): 46-49.

DOI：10.1109/LED.2015.2501843

• Flexible
• complementary circuit
• inverter
• ring oscillator
• tin monoxide (SnO)
• zinc oxide (ZnO)
• thin-film transistor (TFT)

In this letter, we report flexible fully oxide-based complementary metal-oxide-semiconductor (CMOS) inverters and ring oscillators by the monolithic integration of flexible n-channel zinc oxide (ZnO) and p-channel tin monoxide (SnO) thin-film transistors (TFTs). Inverted-staggered bottom-gated TFTs were fabricated by a low-temperature RF-sputtering technique. The static voltage gain of a flexible oxide-TFT-based CMOS inverter with a geometric aspect ratio of 5 is similar to 12 at a supplied voltage (V-DD) of 12 V. An oscillation frequency of similar to 18.4 kHz is obtained from a five-stage flexible oxide-TFT-based CMOS voltage control ring oscillator at V-DD of 12 V. Degradations of TFTs, inverters, and ring oscillators have been observed when a mechanical tensile strain is applied, whereas the influence of compressive strain is negligible.

• 出版日期2016-1