FABRICATION AND PROPERTIES OF METAL-PZT-METAL CAPACITORS BY LIQUID DELIVERY MOCVD

作者：Xie Dan^*; Li Rui; Han Xueguang; Ruan Yong; Ren Tian Ling; Liu Li Tian

来源：Integrated Ferroelectrics, 2008, 100: 114-122.

DOI：10.1080/10584580802540538

• Lead zirconate titanate
• ferroelectric thin films
• chemical vapor deposition
• electrical properties

Pb(Zr1-x,Tix)O3(PZT) thin films were prepared on 8-inch and 4-inch Pt or Ir-electroded Si wafers by liquid delivery metal-organic chemical vapor deposition (LD-MOCVD) using cocktail sources of Pb, Zr and Ti. The processing conditions were optimized in order to obtain high-performance PZT films. The thickness uniformity of PZT films on 8-inch substrate was about 3.24%. The deposition rate of Pb (15.8 nm/min) and Ti (17.9 nm/min) deposited on Si substrate were faster than that of Zr (2.5 nm/min). The growth temperature of PZT film was adjusted to 570-630C depending on the substrates used. The properties of metal/PZT/metal capacitors were also studied. The PZT films based on Pt substrate showed no good ferroelectric properties. By contrast, the ferroelectric properties of Ir/IrO2/PZT/IrO2/Ir capacitors were excellent. At an applied voltage of 5 V, the remanent polarization (Pr) and coercive field (Ec) values were about 36 C/cm2 and 50 kV/cm, respectively.

• 出版日期2008
• 单位清华大学