Doping-induced changes in the saturable absorption of monolayer graphene

作者:Lee C C*; Miller J M; Schibli T R
来源:Applied Physics B: Lasers and Optics , 2012, 108(1): 129-135.
DOI:10.1007/s00340-012-5095-5

摘要

Graphene is a broadband, fast saturable absorber well suited for passive mode-locking of lasers. The broadband absorption, ultra-short recovery time, and low cost of graphene absorbers compare favorably with traditional semiconductor saturable absorber mirrors (SESAMs). However, it remains difficult to tailor the parameters of a monolayer graphene absorber such as the modulation depth and the insertion loss; this limits the absorber's design freedom, which is often required for mode-locking without Q-switching instability. We demonstrate in this work that, by hole-doping graphene chemically to various Fermi levels, the modulation depth and insertion loss are modified. Further control of graphene's saturable absorption by electric-field gating and its application to active suppression of Q-switching in lasers is discussed.

  • 出版日期2012-7