Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks

作者：Ho, Szu Han^*; Chang, Ting Chang; Wu, Chi Wei; Lo, Wen Hung; Chen, Ching En; Tsai, Jyun Yu; Chen, Hua Mao; Liu, Guan Ru; Tseng, Tseung Yuen; Cheng, O**ert; Huang, Cheng Tung; Chen, Daniel; Sze, Simon M

来源：ECS Journal of Solid State Science and Technology, 2013, 2(9): Q187-Q191.

DOI：10.1149/2.027309jss

In this study, the authors investigated an anomalous gate current hump after dynamic negative bias stress (NBS) and negative-bias temperature-instability (NBTI) in HfxZr1-xO2 and HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. This result is attributed to hole trapping in high-k bulk. Measuring gate current under initial through body floating and source/drain floating conditions indicates that holes flow from source/drain to gate. The fitting of the gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction under initial. Next, fitting the gate current after dynamic NBS and NBTI indicates Frenkel-Poole then tunneling mechanisms, finally returning to the Frenkel-Poole mechanism. These phenomena can be attributed to hole trapping in high-k bulk and the formula Ehigh-k epsilon(high-k) = Q + E-sio2 epsilon(sio2). To further understand the gate current hump, both Zr-undoped and 8 similar to 10% Zr-doped in high-k bulk devices were used for comparisons. These results indicate that initial gate current is also a significant factor in generating the anomalous gate current hump, and all results obey the hump generation condition of J(Tunneling) << J(Frenkel-Poole).

• 出版日期2013
• 单位中山大学