Application of a TDDB Model to the Optimization of the Programming Voltage and Dimensions of Antifuse Bitcells

作者：Deloge Matthieu^*; Allard Bruno; Candelier Philippe; Damiens Joel; Le Roux Elise; Rafik Mustapha

来源：IEEE Electron Device Letters, 2011, 32(8): 1041-1043.

DOI：10.1109/LED.2011.2158054

• Antifuse
• dielectric breakdown
• nonvolatile memory
• TDDB modeling

The optimization of the programming voltage and the dimensions of antifuse bitcells is a design challenge due to antagonistic parameters. An optimization approach is presented using a time-dependent dielectric breakdown (TDDB) model. Fowler-Nordheim wear-out current and T(BD) power-law models are identified using electrical characterizations performed on antifuse bitcells fabricated in standard 40-nm CMOS. The TDDB model allows the calculation of the programming voltage according to a targeted T(BD) and the antifuse bitcell dimensions. As a result, it was shown that the lowest programming voltage is obtained for a small capacitor, whereas the size of the drift transistor has a second-order impact.

• 出版日期2011-8