Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field

作者：Yang Ziwen^*; Li Rui; Wei Qiyuan; Yu Tao; Zhang Yanzhao; Chen Weihua; Hu Xiaodong

来源：Applied Physics Letters, 2009, 94(6): 061120.

DOI：10.1063/1.3075862

• gallium compounds
• III-V semiconductors
• indium compounds
• quantum confined Stark effect
• semiconductor quantum wells
• wide band gap semiconductors

InGaN/GaN triangular quantum wells (QWs) are investigated theoretically, and the electron-hole wave-function overlap and optical gain characteristics are analyzed. The strong internal piezoelectric field is taken into account to explain the major difference between the optical properties of triangular QWs and conventional rectangular QWs. Our calculations reveal that triangular QWs, in comparison to rectangular QWs, provide higher electron-hole wave-function overlap and are less affected by the quantum confined Stark effect. Furthermore, triangular QWs exhibit increased optical gain and higher polarization degree, which are beneficial to GaN-based light emitting devices.

• 出版日期2009-2-9
• 单位北京大学