Analysis of dual-gate high electron mobility transistor using an unconditionally stable time domain method

作者：Mayani Mahdieh Gholami; Asadi Shahrooz^*

来源：IET Science Measurement & Technology, 2018, 12(5): 698-705.

DOI：10.1049/iet-smt.2017.0398

• high electron mobility transistors
• finite difference time-domain analysis
• III-V semiconductors
• gallium arsenide
• matrix algebra
• multiconductor transmission lines
• semiconductor device models
• AlGaAs
• efficient time-domain analysis
• CN-FDTD method
• distributed modelling approach
• conventional leap-frog FDTD scheme
• unconditionally stable CN method
• time step size
• central processing unit time
• governing matrix telegrapher equation
• active multiconductor transmission line

A dual-gate aluminium gallium arsenide (GaAs)/GaAs pseudomorphic high electron mobility transistor is analysed based on the distributed modelling approach, wherein the transistor is considered as an active multi-conductor transmission line. Discretisation of the governing matrix Telegrapher's equation is carried out using the implicit Crank-Nicolson-finite-difference time-domain (CN-FDTD) method. The results obtained from the proposed method are compared with the results of the conventional leap-frog (LF) FDTD scheme. It is observed that the unconditionally stable CN method is in good agreement with the LF method even by increasing the time step size by the factor of 5000, leading to a dramatic decrease in the central processing unit time.

• 出版日期2018-8