Discrepancy between ambient annealing and H+ implantation in optical absorption of ZnO

作者：Lv, Jinpeng^*; Li, Chundong

来源：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms , 2016, 375: 5-7.

DOI：10.1016/j.nimb.2016.03.034

• ZnO
• Particle implantation
• Defect
• Visible absorption

The discrepancy between sub-bandgap absorption in ZnO induced by thermal annealing and H+ implantation is investigated in this study for the first time. Results indicate that nonreductive annealing-induced optical absorption is independent of annealing ambient, and can be assigned to V-o, whereas the absorption centers caused by H+ implantation and H-2 annealing are primarily associated with V-o and ionized Zn-i.

• 出版日期2016-5-15
• 单位南京航空航天大学; 哈尔滨工业大学