A study of Ni3Sn4 growth dynamics in Ni-Sn TLPS bonding process by differential scanning calorimetry

作者：Feng, Hongliang; Huang, Jihua^*; Peng, Xianwen; Lv, Zhiwei; Wang, Yue; Yang, Jian; Chen, Shuhai; Zhao, Xingke

来源：Thermochimica Acta, 2018, 663: 53-57.

DOI：10.1016/j.tca.2018.03.006

• Dynamics
• Ni-Sn UPS
• Melting enthalpy
• Residual rate
• Ni3Sn4 growth

Transient liquid phase sintering (TLPS) bonding process is a promising packaging process for the new generation semiconductor devices. hi this paper, the dynamics of Ni-Sn UPS bonding is researched. The melting enthalpy and the residual rate of Sn in the simulative and actual bonding process were measured by differential scanning calorimetry. Based on this, the radius of residual Ni particle and thickness of Ni3Sn4 compound were further calculated. The results show that when the initial average radius of Ni particle is 6.5 mu m, after holding for 60 min and 240 min at 300 degrees C, the thickness of Ni3Sn4 is about 4.28 mu m and 6.14 mu m separately. The thickness Delta r of Ni3Sn4 in the simulative bonding process shows a linear relationship as t(0.38), i.e. Delta r = 1.17t(0.38), which is in agreement with that in the actual bonding layer.

• 出版日期2018-5-10
• 单位北京科技大学