A fast transient response low dropout regulator with current control methodology

作者：Ma Zhuo^*; Guo Yang; Duan Zhikui; Xie Lunguo; Chen Jihua; Yu Jinshan

来源：Chinese Journal of Semiconductors, 2011, 32(8).

DOI：10.1088/1674-4926/32/8/085007

• Charge pump phase-locked loops
• CMOS processs
• Control methods
• Current control loop
• damping coefficient
• Damping coefficients
• Decoupling capacitor
• Error current
• Fast transient response
• Feedback signal
• Gate voltages
• LDO
• Loop filter
• Low dropout regulator
• Output voltages
• Power MOSFET
• Reference currents
• Reference voltages
• Settling time
• Transient performance

A transient performance optimized CCL-LDO regulator is proposed. In the CCL-LDO, the control method of the charge pump phase-locked loop is adopted. A current control loop has the feedback signal and reference current to be compared, and then a loop filter generates the gate voltage of the power MOSFET by integrating the error current. The CCL-LDO has the optimized damping coefficient and natural resonant frequency, while its output voltage can be sub-1-V and is not restricted by the reference voltage. With a 1 μF decoupling capacitor, the experimental results based on a 0.13 μm CMOS process show that the output voltage is 1.0 V; when the workload changes from 100 μA to 100 mA transiently, the stable dropout is 4.25 mV, the settling time is 8.2 μs and the undershoot is 5.11 mV; when the workload changes from 100 mA to 100 μA transiently, the stable dropout is 4.25 mV, the settling time is 23.3 μs and the overshoot is 6.21 mV. The PSRR value is more than -95 dB. Most of the attributes of the CCL-LDO are improved rapidly with a FOM value of 0.0097.

• 出版日期2011