Memristive Logic-in-Memory Integrated Circuits for Energy-Efficient Flexible Electronics

作者：Jang Byung Chul; Nam Yunyong; Koo Beom Jun; Choi Junhwan; Im Sung Gap; Park Sang-Hee Ko^*; Choi Sung-Yool^*

来源：Advanced Functional Materials, 2018, 28(2): 1704725.

DOI：10.1002/adfm.201704725

• amorphous In-Zn-Sn-O (a-IZTO)
• flexible selectors
• memristor crossbar arrays
• nonvolatile logic-in-memory circuits
• surface electron accumulation layers (SEAL)

A memristive nonvolatile logic-in-memory circuit can provide a novel energyefficient computing architecture for battery-powered flexible electronics. However, the cell-to-cell interference existing in the memristor crossbar array impedes both the reading process and parallel computing. Here, it is demonstrated that integration of an amorphous In-Zn-Sn-O (a-IZTO) semiconductor-based selector (1S) device and a poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor (1M) on a flexible substrate can overcome these problems. The developed a-IZTO-based selector device, having a Pd/a-IZTO/Pd structure, exhibits nonlinear current-voltage (I-V) characteristics with outstanding stability against electrical and mechanical stresses. Its underlying conduction mechanism is systematically determined via the temperature- dependent I-V characteristics. The flexible one-selector-one-memristor (1S-1M) array exhibits reliable electrical characteristics and significant leakage current suppression. Furthermore, single-instruction multiple-data (SIMD), the foundation of parallel computing, is successfully implemented by performing NOT and NOR gates over multiple rows within the 1S-1M array. The results presented here will pave the way for development of a flexible nonvolatile logicin- memory circuit for energy-efficient flexible electronics.

• 出版日期2018-1-10