科研之友
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摘要
We report a theoretical investigation, at the nanoscale, free of any adjustable parameters, concerning the size, shape, composition, and segregation effects on the melting temperature and energy bandgap of In(1-x)Ga(x)As. The corresponding nanophase diagram is established. From it, the composition and segregation effects on the energy bandgap of the ternary semiconducting nanoalloy are deduced. The information obtained in this study can be used to tune the thermo-optical properties of In(1-x)Ga(x)As in nano-optoelectronics.
- 出版日期2008-11-20
