Highly Robust AHHVSCR-Based ESD Protection Circuit

作者：Song Bo Bae; Koo Yong Seo^*

来源：ETRI Journal, 2016, 38(2): 272-279.

DOI：10.4218/etrij.16.2515.0037

• ESD protection circuit
• SCR
• robustness
• trigger voltage
• holding voltage

In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHEIVSCR) is proposed. The proposed new structure specifically for an AHEIVSCR-based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch-up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit - (i) an AIIHVSCR-based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR-based ESD protection circuit, and (iii) a standard IIHVSCR-based ESD protection circuit. A circuit having the proposed new structure is fabricated using 0.18 mu m Bipolar-CMOS-DMOS technology. The fabricated circuit is also evaluated using Transmission Line Pulse measurements to confirm its electrical characteristics, and human-body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A.

• 出版日期2016-4