Ab-initio study of Al1-xGaxSb compound

作者：Devi Nisha; Sharma Sonu; Verma U P^*

来源：Zeitschrift fur Kristallographie, 2011, 226(1): 83-88.

DOI：10.1524/zkri.2011.1335

• Ab-initio calculations
• III-V Semiconductors
• Optical properties

The ground-state structural, electronic and optical properties of the Al1-xGaxSb compound in the zinc-blende phase for x = 0.125, 0.25 and 0.50 have been studied employing the full potential linearized augmented plane wave plus local orbitals method based on the density functional theory. For the exchange-correlation effects we have adopted the GGA approach. In order to model Al1-xGaxSb zincblende alloys, we employ a 16-atoms supercell of the type 2 x 2 x 2. The lattice structures of Al0.875Ga0.125Sb, Al0.75Ga0.25Sb and Al0.50Ga0.50Sb are obtained by replacing one, two and four Al atoms, respectively, with an equal number of Ga atoms in the crystal lattice of AlSb. The variation of energy band gap of Al1-xGaxSb versus the value of reveals that the band gap bowing parameter has strong composition dependence for small concentrations of Ga. The DOS plots and the various calculated optical properties are in accordance with the calculated electronic properties. The characteristic properties of Al1-xGaxSb are dominated by the Sb 5p electrons. Linear optical properties such as the dynamic dielectric function, static refractive index, reflectivity and energy loss function for an energy range of 0 to 13.50 eV have been studied. The static dielectric constant increases with the increase in Ga concentration in Al1-xGaxSb. The bulk plasma frequency omega(p) for this material corresponds to 13.19 eV.

• 出版日期2011