A Low-Consumption Regulated Gate Driver for Power MOSFET

作者：Tzeng Ren Huei^*; Chen Chem Lin

来源：IEEE Transactions on Power Electronics, 2009, 24(1-2): 532-539.

DOI：10.1109/TPEL.2008.2007213

• Gate driver
• high frequency
• power MOSFET
• switching loss

Driving power MOSFET at high switching frequency may induce significant switching power losses. A gate driver with low energy consumption is proposed for power MOSFET in switching power conversion applications. The proposed gate driver regulates the output gate driving voltage for minimizing the loss of charging and discharging the gate capacitor. No extra off-chip components are required, and hence, the proposed approach can be completely designed on chip. A 40 V/0.5 mu m CMOS technology is utilized and experiments on a boost converter are performed. The power dissipation of the proposed gate driver, compared with the conventional gate driver, can be reduced up to 15.5 % and 55.4 % under 15 V and 30 V supply voltage, respectively.

• 出版日期2009-2
• 单位中国科学院电工研究所