High-kappa NdTaO4 dielectrics deposited on polycrystalline silicon substrates

作者：Kao Chyuan Haur; Lin Min Han; He Yun Yang; Lin Yung Sen; Lin Chia Feng; Chen Hsiang^*; Syu Jhih Jyun

来源：Journal of Materials Science: Materials in Electronics , 2016, 27(4): 3693-3696.

DOI：10.1007/s10854-015-4209-3

High-k NdTaO4 dielectrics annealed with various temperatures were first deposited on polycrystalline silicon substrates. Material and electrical characterizations were performed. To examine the crystalline structures, X-ray diffraction patterns were analyzed. Electrical measurements including current-voltage characteristics, constant current stress, and the Weibull plots show that annealing could enhance the breakdown voltages, lower the trapping rate, and strengthen the reliability. Results indicate that annealing at 900 A degrees C may optimize the dielectric performance. This dielectric shows promise for future gate material or flash memory integrated with current NdTaO4-based optical devices.

• 出版日期2016-4
• 单位长春大学