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摘要
A fully analytical potential model, valid in the weak inversion regime of short-channel cylindrical gate-all-around (GAA) MOSFET, is proposed. The model derivation is based on a previous analytical expression for tetragonal GAA MOSFET and the rotational symmetry of the tetragonal cross section. Device simulations were performed to verify that the potential distribution along the channel is properly described in all positions within the silicon body. Using the potential model, analytical expressions for the threshold voltage, subthreshold swing and drain-induced barrier lowering have been derived. Including the short-channel effects within an existing model for the subthreshold leakage current and an analytical drain current model of long-channel devices in strong inversion, a compact drain current model has been derived describing with good accuracy the transfer and output characteristics of short-channel GAA MOSFETs in all regions of operation.
- 出版日期2009-7
