Atomic arrangement variations of [0001]-tilt grain boundaries in ZnO thin films grown on p-Si substrates due to thermal treatment

作者：Shin J W; Lee J Y; No Y S; Jung J H; Kim T W^*; Choi W K

来源：Applied Physics Letters, 2007, 90(18): 181907.

DOI：10.1063/1.2732177

The plane-view high-resolution transmission electron microscopy (HRTEM) images in ZnO thin films grown on p-Si substrates showed that (10 $(1) over bar $0) asymmetric grain boundaries with a periodic array of strain contrast features existed in a sparse columnar structure for as- grown ZnO thin films and that (11 $(2) over bar $0) asymmetric grain boundaries and (851 $(3) over bar $0) symmetric grain boundaries existed in a dense columnar structure for annealed ZnO thin films. The atomic arrangement variations of [0001]- tilt grain boundaries in ZnO thin films grown on Si substrates due to thermal treatment are described on the basis of the HRTEM results.

• 出版日期2007-4-30