Antilocalization of hole carriers in Pb1-xEuxTe alloys in the metallic regime

作者：Peres Marcelos L^*; Chitta V A; Oliveira Nei F Jr; Maude D K; Rappl P H O; Ueta A Y; Abramof E

来源：Physical Review B, 2009, 79(8): 085309.

DOI：10.1103/PhysRevB.79.085309

• electron-phonon interactions
• europium compounds
• g-factor
• hole mobility
• IV-VI semiconductors
• lead compounds
• localised states
• magnetoresistance
• narrow band gap semiconductors
• spin-orbit interactions
• Zeeman effect

Magnetoresistance measurements in p-type Pb1-xEuxTe alloys, for x varying from 0% up to 5%, have been used to investigate localization and antilocalization effects. These are attributed to both the spin-orbit scattering and to the large Zeeman splitting present in these alloys due to the large values of the effective Lande g factor. The magnetoresistance curves are analyzed using the model of Fukuyama and Hoshino, which takes into account the spin-orbit and Zeeman scattering mechanisms. The spin-orbit scattering time is found to be independent of the temperature, while the inelastic-scattering time increases with decreasing temperature suggesting the electron-phonon interaction as the main scattering mechanism.

• 出版日期2009-2