科研之友
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摘要
A broadband, high saturation output power 0.15-m gate length GaAs pseudomorphic high-electron mobility transistor push-pull V-band power amplifier has been demonstrated using meandering balun designs. Two meandering low-loss planar three-coupled-line baluns were used to form push-pull mechanism for both stages. The meandering baluns provide 180 degrees differential outputs from the applied single-ended input at the V-band and the size was reduced for 23% compared to traditional design. The proposed push-pull amplifier achieved a peak small-signal gain of 16.8dB at 58GHz, a 3dB bandwidth of 55-62GHz, and a peak power added efficiency of 13.8%.
- 出版日期2013-10-1
- 单位长春大学
