Design and implementation of a 2.8-dB insertion loss v-band bandpass filter in 0.13-mu m cmos technology

作者：Lin Chih Ying^*; Chang Jin Fa; Lin Yo Sheng

来源：Microwave and Optical Technology Letters, 2012, 54(8): 2001-2006.

DOI：10.1002/mop.26984

• low insertion loss
• V-band
• integrated filter
• CMOS
• transmission zero

In this article, we demonstrate a low-insertion-loss V-band bandpass filter with two finite transmission zeros by 0.13-mu m CMOS technology. The proposed filter architecture has the following feature: The low-frequency transmission-zero (?z1) can be tuned individually by the series-feedback capacitor Cs and the series capacitor C3. After ?z1 is determined by Cs and C3, the high-frequency transmission zero (?z2) can be tuned individually by the parallel-feedback capacitor Cp. Besides, low-insertion-loss is achieved by adopting thick microstrip-line with optimized ground-plane pattern as the needed inductors to minimize the metal and substrate loss. This filter achieves insertion-loss (1/S21) lower than 3 dB over the frequency range of 4552 GHz, input return loss (S11) better than -10 dB over the frequency range of 41.257.8 GHz, and output return loss (S22) better than -10 dB over the frequency range of 39.555.9 GHz. The minimum insertion-loss is 2.8 dB at 48 GHz, to the authors' knowledge, this is one of the best results ever reported for a V-band CMOS bandpass filter in the literature. The chip area is only 0.295 x 0.21 mm2, i.e., 0.062 mm2, excluding the test pads and dummy metals for design rule requirement.

• 出版日期2012-8