A new inverter-based charge pump circuit with high conversion ratio and high power efficiency

作者：Hwang Yuh Shyan^*; Wu Dong Shiuh; Lin Ho Cheng; Chen Jiann Jong; Yu Cheng Chieh

来源：Microelectronics Journal, 2011, 42(8): 982-987.

DOI：10.1016/j.mejo.2011.05.006

• Charge pump circuit
• Low-voltage application
• High voltage generator

The current paper presents a new inverter-based charge pump circuit with high conversion ratio and high power efficiency. The proposed charge pump, which consists of a PMOS pass transistor, inverter-based switching transistors, and capacitors, can improve output voltage and conversion ratio of the circuit. The proposed charge pump was fabricated with TSMC 0.35 mu m 2P4M CMOS technology. The chip area without pads is only 0.87 mm x 0.65 mm. The measured results show that the output voltage of the four-stage charge pump circuit with 1.8 V power supply voltage (V(DD)=1.8 V) can be pumped up to 8.2 V. The proposed charge pump circuit achieves efficiency of 60% at 80 mu A.

• 出版日期2011-8