A new approach in impurity doping of 4H-SiC using silicidation

作者：Tin Chin Che^*; Mendis Suwan; Tin Michelle T; Isaacs Smith Tamara; Williams John R

来源：Journal of Applied Physics, 2013, 114(24): 244502.

DOI：10.1063/1.4854816

Oxidation and silicidation have been found to enhance phosphorus diffusion and incorporation in 4H-SiC. Depth profiling by secondary ion mass spectrometry showed significant concentration of phosphorus in the order of 10(18)-10(19) cm(-3) in the near-surface region of 4H-SiC in both oxidation and silicidation-assisted phosphorus-diffused samples. However, silicidation was remarkably more effective than oxidation in promoting phosphorus diffusion, producing comparable phosphorus concentration at even greater depth at a temperature of only 900 degrees C. Specific contact resistance values of the phosphorus-doped samples confirmed feasibility of this method in ohmic contact fabrication on SiC.

• 出版日期2013-12-28