A 30-dB 1-16-GHz low noise if amplifier in 90-nm CMOS

作者：Cao Jia^*; Li Zhiqun; Li Qin; Chen Liang; Zhang Meng; Wu Chenjian; Wang Chong; Wang Zhigong

来源：Chinese Journal of Semiconductors, 2013, 34(8): 085010.

DOI：10.1088/1674-4926/34/8/085010

• CMOS technology
• High gain
• IF amplifiers
• Minimum noise figure
• peaking technique
• Shunt feedback
• Supply voltages
• Wide-band

This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology. A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain. Incorporating an input inductor and a gate-inductive gain-peaking inductor, the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure. The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB. Under 1.2 V supply voltage, the proposed IF amplifier consumes 42 mW DC power. The chip die including pads takes up 0.53 mm2, while the active area is only 0.022 mm2.

• 出版日期2013
• 单位东南大学